, ij nc. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 tmos e-fet ? high energy power fet n-channel enhancement-mode silicon gate this advanced high voltage tmos e-fet is designed to withstand high energy in the avalanche mode and switch efficiently. this new high energy device also offers a drain-to-source diode with fast recovery time. designed for high voltage, high speed switching applications such as power supplies, pwm motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. ? avalanche energy capability specified at elevated temperature ? low stored gate charge for efficient switching ? internal source-to-drain diode designed to replace external zener transient suppressor ? absorbs high energy in the avalanche mode ? source-to-drain diode recovery time comparable to discrete fast recovery diode MTP5N40E tf. tmos tmos power fet 5.0 amperes 400 volts d MTP5N40E electrical characteristics (tj = 25c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain-to-source breakdown voltage (vgs = o, id = 250 uadc) zero gate voltage drain current (vds = 400 v, vgs = 0) (vds = 320 v, vgs = 0. tj = 125c) gate-body leakage current, forward (vqsf = 20 vdc, vds = ) gate-body leakage current, reverse (vgsr = 20 vdc, vds = ) v(br)dss idss igssf 'gssr 400 ? _- ? ? ? ? ? ? 0.25 1.0 100 100 vdc madc nadc nadc on characteristics* gate threshold voltage (vds = vgs. id = 250 nadc) (tj = 125c) static drain-source on-resistance (vgs = 10 vdc, id = 2.5 ado) drain-source on-voltage (vqs = 10 vdc) (ld = 5.0a) (ld = 2.5a, tj = 100c) forward transconductance (vds = 15 vdc, id = 2.5 adc) vgs(th) rds(on) vds(on) 9fs 2.0 1.5 ? i 2.0 ? 0.8 - ? 4.0 3.5 1.0 6.2 5.0 ? vdc ohm vdc mhos dynamic characteristics input capacitance output capacitance transfer capacitance (vds - 25 v, vgs = > f = 1.0mhz) cjss coss crss ? ? ? 775 96 22 ? ? ? pf switching characteristics* turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain charge (vdd = 250 v, id ? 5.0 a, vgs(on) = 10v) (vds - 320 v, id = 5.0 a, vgs = iov) td(on) tr td(off) tf qg qgs qgd ? ? ? ? ? ? ? 24 34 60 36 27 3.5 14 ? ? ? ? 32 ? ? ns nc source-drain diode characteristics* forward on-voltage forward turn-on time reverse recovery time (is = 5.0 a, di/dt = 100 a/us) vsd 'on trr ? ? 1.4 *? ? ? 660 vdc ns internal package inductance internal drain inductance (measured from the contact screw on tab to center of die) (measured from the drain lead 0.25" from package to center of die) internal source inductance (measured from the source lead 0.25" from package to source bond pad) ld ls ? ? 3.5 4.5 7.5 ? ? nh * indicates pulse test: pulse width = 300 us max, duty cycle < 2.0%. ** limited by circuit inductance.
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